Dry Pump AGV Protection Gate Valve

Evaluated parameters:
◈ Particle Check (Pump Down) ◈ Polymer DEPO.
◈ Valve Speed (< 0.1 sec) ◈ O-ring Corrosion

Process
M/CM/NModuleV/V SizeV/V PositionEvaluation result
Diffusion
MTOTELINDYPLUSPMΦ160mmPump InletEXCELLENT
(SAMSUNG, SK Hynix)
Diffusion
ALDTELINDYPLUSPMΦ160mmPump Inlet
ETCHMETALAMATCENTURAL/LΦ80mmPump Inlet
ETCHMETALLAMKIYOPMΦ125mmPump Inlet
ETCHASHINGPSKSURPA5MPMΦ160mmPump Inlet
DiffusionALDTELPMΦ160mmPump Inlet
ETCHPolyLAMKIYOPMΦ125mmPump Inlet
PVDWAMATILTIMAPMΦ100mmPump Inlet
PVDSTIAMATULTIMAPMΦ100mmPump Inlet
ETCHOxideTELDRMTMΦ100mmPump Inlet
ETCHASHINGRAMCORAM-8500PMΦ50mmPump Inlet
DiffusionFABPMΦ160mmPump Inlet
PVDFABPMΦ160mmPump Inlet
PVDFABPMΦ100mmPump Inlet
PVDFABPMΦ80mmPump Inlet
PVDWINLAMALTUSPMΦ100mmCh. Iso V/V
PMΦ50mmCh. Iso V/V
Static electricity
removal system
PMΦ50/100mmCh. Iso V/V

ITEMS:
◈ Polymer DEPO.
◈ Valve Leak ◈ O-ring Corrosion

Process
M/CM/NModuleV/V SizeV/V PositionEvaluation result
ETCH
OXIDELAMKIYOCh.NW25,NW40PMEXCELLENT
(SAMSUNG, SK Hynix)
ETCH
METALLAMTCP9600Ch.NW40PM
ETCHMETALAMATCENTURACh.NW25,NW40PM
ETCHMETALEquipment manufacturerCh.NW40PM
ETCHOXIDEEquipment manufacturerCh.NW25,NW40PM
CVDEquipment manufacturerCh.ISO 160PM

You can find specification for our valves here:

Equipment: SAMSUNG (AMAT / Centura DPS)
Process: Etch (Metal)

Particle Check PointCompany “A”
Valve Particle Data(ea)
LAON
BPS Valve Particle Data(ea)
LAON
Particle reduction rate(%)
At Pumping Pressure <1 Torr, Pump Down

8,813399.9660%
17,675799.9604%
At Pumping Pressure 10 Torr, Pump Down

96,2353399.9657%
31,5835099.8417%
At Pumping Pressure 100 Torr, Pump Down107,7093999.9638%

Particle Data at PROCESS CHAMBER

Equipment: SAMSUNG (PSK / SUPRA5M)
Process: Etch (Ashing)

Particle Check PointCompany “B”
Valve Particle Data(ea)
LAON
BPS Valve Particle Data(ea)
LAON
Particle reduction rate(%)
At Pumping Pressure 1 Torr, Pump Down
6501099.46%
At Pumping Pressure 5 Torr, Pump Down
1183399.75%
At Pumping Pressure 100 Torr, Pump Down221340.91%

Particle Data at PROCESS CHAMBER

Equipment: SK Hynix (Lam / Kiyo)
Process: Etch (Poly)
Particle Wafer (Order: loading ⇒ PM(3min) ⇒ unloading) Particle Data compared during Pump ON and OFF states.

ConditionParticle Data(ea)Base PressureForeline Pressure
Pump ON
1112.5mT16mT
Pump Down
1112.8mT16mT

BPS Valve Installation Test Results: No change in chamber pressure when Pump is OFF.
Excellent back stream prevention and P/T control capabilities.

Chamber Isolation Gate Valve Application


Equipment: SK Hynix- ALTUS (Lam)
Process: CVD(WN)
Test duration: 60,000 wafer cycles ( 3 Months )

Gate ValveCompany “V” ValveLAON BPS Valve
Results• Drive unit malfunctioned due to polymer deposition
• Large amounts of polymer deposition on the O-ring housing plate and bearing

• Polymer Depo. EH (Housing, Sealing Plate)
• Close O-ring, no corrosion or contamination

Particle Data at PROCESS CHAMBER

Equipment: SK Hynix (AMAT / ULTIMA)
Process: CVD(STI & W)
Test duration: 3 months
BPS Demo Test due to corrosion problem with Kalrez O-Rings

Mass production equipment evaluation results

Angle Valve for Process Chamber

Customer: DB HiTek
Process: Etch (Metal)

Company “V” Heating Angle ValveLAON BPS-CA Heating Angle Valve
Comparison Analysis
• Pumping Conductance Decreased
⇒ Reference Pressure: Increased by 150 mTorr
(30 mT = 150 mTorr)
• PM Cycle: Cleaning once every 2 months
• Improved Pumping Conductance
⇒ Maintain Reference Pressure (30mT⇒30mT)
(Reference Pressure: 30mTorr)
• PM Cycle: At least three times the cleaning cycle (more than 6 months)
Results
• Reduced pumping conductivity due to large polymer deposits
• Close O-ring Deposition leak found
• Polymer Deposition insufficient
• Maintain Pumping Conductance
• Leak Stabilization

Valve state change after Run Flow for 4 months

Valve state change after Run Flow for 4 months

Angle Valve for Process Chamber

Customer: Gigalane
Process: Etch (Poly)

Company “V” Heating Angle ValveLAON BPS-CA Heating Angle Valve
Analysis & Results
• PM Cycle: Cleaning once every three months
• Particle generation
• Reduced Pumping Conductance due to polymer deposition
• Leakage due to Close O-ring deposition
• PM Cycle: Cleaning cycle is longer >4 times (~2 years)
• Polymer Depo. thickness significantly improved
• Pumping Conductance
• Leak Stabilization

Mass production equipment evaluation results

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