Etcher Equipment

HARDWARE | LAON EQUIPMENT

Plasma Source
- CCP, ICP, RIE, Microwave
- Process: Poly, Oxide, Metal
Upper Assembly
- Gas Shower Head Type, based on RF Source
- Gas Top Feeding or Side Feeding
- Gas Nozzle Type and Concept
- Materials and Design Concept, based on RF Source
Cathode Assembly
- ESC Type (Unipolar, Bipolar Type)
- ESC Heater Zone & T.C & Cooling
- ESC Surface Type
- Back Side He Flow Route
- Cathode Assembly Design for RF Bias
- Design for Cathode Assembly heat transfer efficiency

RF
- RF Source’s Frequency and Power
- RF Bias’ Frequency and Power
- Peripherals Concept for RF (Harmony & RF Filter)
- Mechanical Design for RF Power
Process Kits & Pumping Conductance
- Process Kits & Liner Kits & Coating Material
- EPD & Baffle & Pumping Port Concept Design
- Chamber Design (Heating & Cooling)

Dicing Plasma PM

SOURCE	CCP
Wafer size	12”
RF	Top & Bottom
Process Chamber	Bottom Side Pumping Concept 2~4 CHAMBER
Process Gas	Dual Zone Gas Feed
ESC	Bipolar & Dual Backside He Control

ETCH Plasma PM

SOURCE	ICP, CCP
Wafer size	12”
RF	Top & Bottom
Process Chamber	Center Pumping Concept 2~4 CHAMBER
Process Gas	Dual Zone Gas Feed
ESC	Unipolar & Dual Backside He Control

Pe_Cleaning Plasma PM

Electrostatic Discharge Plasma Module

ETCHER EQUIPMENT